c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 www. ruichips .com ru 2020 h n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 2 0 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 4.4 a mounted on large heat sink i d p 300 s pulse drain current tested t a =25 c 7 0 a t a =25 c 20 i d continuous drain current ( v gs =10v) t a = 7 0 c 17 a t a =25 c 3.1 p d maximum power dissipation t a = 7 0 c 2 w r q j a thermal resistance - junction to ambient 40 c /w ? 2 0 v/ 20 a, r ds ( on ) = 3.5 m w (typ. ) @ v gs =10v r ds ( on ) = 3.8 m w (typ. ) @ v gs = 4.5 v r ds ( on ) = 5.6 m w (typ.) @ v gs = 2.5 v ? super high dense cell design ? low r ds(on) ? reliable and rugged ? lead free and green available ? dc/dc converter absolute maximum ratings sop - 8 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 2 www. ruichips .com ru 2020 h electrical characteristics ( t a =25 c unless otherwise noted) r u 2020 h symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 2 0 v v ds = 2 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 0 .5 1 1.5 v i gss gate leakage current v gs = 12 v, v ds =0v 100 n a v gs = 10 v, i ds = 20 a 3.5 5.2 m w v gs = 4 .5 v, i ds = 16 a 3.8 6.5 m w r ds ( on ) drain - source on - state resistance v gs = 2.5 v, i ds = 12 a 5.6 9 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 v t rr reverse recovery time 2 7 ns q rr reverse recovery charge i sd = 10 a, dl sd /dt=100a/ m s 3 9 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2 w c iss input capacitance 3 6 80 c oss output capacitance 1 53 0 c rss reverse transfer capacitance v gs =0v, v ds = 1 0 v, frequency=1.0mhz 37 0 pf t d ( on ) turn - on delay time 20 t r turn - on rise time 25 t d ( off ) turn - off delay time 92 t f turn - off fall time v dd = 1 0 v, r l = 1 w , i ds = 1 0 a, v gen = 4.5 v, r g = 6 w 45 ns gate charge characteristics q g total gate charge 53 q gs gate - source charge 11 q gd gate - drain charge v ds = 16 v, v gs = 4.5 v, i ds = 1 0 a 20 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 3 www. ruichips .com ru 2020 h typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 4 www. ruichips .com ru 2020 h typical characteristics outpu t characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 5 www. ruichips .com ru 2020 h typical characteristics drain - source on resistance source - drain diode fo rward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source v oltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 6 www. ruichips .com ru 2020 h avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 7 www. ruichips .com ru 2020 h ordering and marking i nformation device marking package packaging quantity reel size tape width ru 2020 h ru 2020 h so p - 8 tape&reel 2500 13 12mm
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 8 www. ruichips .com ru 2020 h package information sop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max mi n max a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 9 www. ruichips .com ru 2020 h customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com in vestor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal cont act: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
